| IPC 6 English version | C30-C30B01912 | |
| C30B 21/00 - C30B 35/00 >> |
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SECTION C | – CHEMISTRY; METALLURGY |
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CRYSTAL GROWTH (separation by crystallisation in general B 01 D 9/00) |
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SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds B 01 J 3/06) |
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Notes |
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(1) | In this subclass, the following expressions are used with the meaning indicated: |
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– | "single crystal" includes also twin crystals and a predominantly single crystal product; [3] |
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– | "homogeneous polycrystalline material" means a material with crystal particles, all of which have the same chemical composition; [5] |
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– | "defined structure" means the structure of a material with grains which are oriented in a preferential way or have larger dimensions than normally obtained. [5] |
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(2) | In this subclass: |
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– | the preparation of single crystals or a homogeneous polycrystalline material with defined structure of particular materials or shapes is classified in the group for the process as well as in group C 30 B 29/00; [3] |
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– | an apparatus specially adapted for a specific process is classified in the appropriate group for the process. Apparatus to be used in more than one kind of process is classified in group C 30 B 35/00. [3] |
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Single-crystal growth from solids or gels [3] |
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1/ | 00 | Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C 30 B 3/00; under a protective fluid C 30 B 27/00) |
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1/ | 02 | . | by thermal treatment, e.g. strain annealing (C 30 B 1/12 takes precedence) [3] |
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1/ | 04 | . . | Isothermal recrystallisation [3] |
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1/ | 06 | . . | Recrystallisation under a temperature gradient [3] |
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1/ | 08 | . . . | Zone recrystallisation [3] |
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1/ | 10 | . | by solid state reactions or multi-phase diffusion [3] |
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1/ | 12 | . | by pressure treatment during the growth [3] |
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3/ | 00 | Unidirectional demixing of eutectoid materials [3] |
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5/ | 00 | Single-crystal growth from gels (under a protective fluid C 30 B 27/00) |
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5/ | 02 | . | with addition of doping materials [3] |
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Single-crystal growth from liquids; Unidirectional solidification of eutectic materials [3] |
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7/ | 00 | Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C 30 B 9/00; by normal or gradient freezing C 30 B 11/00; under a protective fluid C 30 B 27/00) |
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7/ | 02 | . | by evaporation of the solvent [3] |
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7/ | 04 | . . | using aqueous solvents [3] |
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7/ | 06 | . . | using non-aqueous solvents [3] |
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7/ | 08 | . | by cooling of the solution [3] |
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7/ | 10 | . | by application of pressure, e.g. hydrothermal processes [3] |
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7/ | 12 | . | by electrolysis [3] |
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7/ | 14 | . | the crystallising materials being formed by chemical reactions in the solution [3] |
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9/ | 00 | Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C 30 B 11/00; by zone-melting C 30 B 13/00; by crystal pulling C 30 B 15/00; on immersed seed crystal C 30 B 17/00; by liquid phase epitaxial growth C 30 B 19/00; under a protective fluid C 30 B 27/00) |
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9/ | 02 | . | by evaporation of the molten solvent [3] |
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9/ | 04 | . | by cooling of the solution [3] |
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9/ | 06 | . . | using as solvent a component of the crystal composition [3] |
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9/ | 08 | . . | using other solvents [3] |
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9/ | 10 | . . . | Metal solvents [3] |
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9/ | 12 | . . . | Salt solvents, e.g. flux growth [3] |
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9/ | 14 | . | by electrolysis [3] |
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11/ | 00 | Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method (C 30 B 13/00, C 30 B 15/00, C 30 B 17/00, C 30 B 19/00 take precedence; under a protective fluid C 30 B 27/00) |
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11/ | 02 | . | without using solvents (C 30 B 11/06 takes precedence) [3] |
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11/ | 04 | . | adding crystallising materials or reactants forming it in situ to the melt [3] |
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11/ | 06 | . . | at least one but not all components of the crystal composition being added [3] |
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11/ | 08 | . . | every component of the crystal composition being added during the crystallisation [3] |
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11/ | 10 | . . . | Solid or liquid components, e.g. Verneuil method [3] |
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11/ | 12 | . . . | Vaporous components, e.g. vapour-liquid-solid-growth [3] |
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11/ | 14 | . | characterised by the seed, e.g. its crystallographic orientation [3] |
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13/ | 00 | Single-crystal growth by zone-melting; Refining by zone-melting (C 30 B 17/00 takes precedence; by changing the cross-section of the treated solid C 30 B 15/00; under a protective fluid C 30 B 27/00; for the growth of homogeneous polycrystalline material with defined structure C 30 B 28/00; zone-refining of specific materials, see the relevant subclasses for the materials) |
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13/ | 02 | . | Zone-melting with a solvent, e.g. travelling solvent process [3] |
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13/ | 04 | . | Homogenisation by zone-levelling [3] |
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13/ | 06 | . | the molten zone not extending over the whole cross-section [3] |
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13/ | 08 | . | adding crystallising materials or reactants forming it in situ to the molten zone [3] |
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13/ | 10 | . . | with addition of doping materials [3] |
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13/ | 12 | . . . | in the gaseous or vapour state [3] |
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13/ | 14 | . | Crucibles or vessels [3] |
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13/ | 16 | . | Heating of the molten zone [3] |
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13/ | 18 | . . | the heating element being in contact with, or immersed in, the molten zone [3] |
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13/ | 20 | . . | by induction, e.g. hot wire technique (C 30 B 13/18 takes precedence; induction coils H 05 B 6/36) [3] |
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13/ | 22 | . . | by irradiation or electric discharge [3] |
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13/ | 24 | . . . | using electromagnetic waves [3] |
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13/ | 26 | . | Stirring of the molten zone [3] |
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13/ | 28 | . | Controlling or regulating (controlling or regulating in general G 05) [3] |
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13/ | 30 | . . | Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal [3] |
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13/ | 32 | . | Mechanisms for moving either the charge or the heater [3] |
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13/ | 34 | . | characterised by the seed, e.g. by its crystallographic orientation [3] |
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15/ | 00 | Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C 30 B 27/00) |
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15/ | 02 | . | adding crystallising materials or reactants forming it in situ to the melt [3] |
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15/ | 04 | . . | adding doping materials, e.g. for n-p-junction [3] |
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15/ | 06 | . | Non-vertical pulling [3] |
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15/ | 08 | . | Downward pulling [3] |
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15/ | 10 | . | Crucibles or containers for supporting the melt [3] |
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15/ | 12 | . . | Double crucible methods [3] |
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15/ | 14 | . | Heating of the melt or the crystallised materials [3] |
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15/ | 16 | . . | by irradiation or electric discharge [3] |
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15/ | 18 | . . | using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat [3] |
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15/ | 20 | . | Controlling or regulating (controlling or regulating in general G 05) [3] |
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15/ | 22 | . . | Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal [3] |
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15/ | 24 | . . . | using mechanical means, e.g. shaping guides (shaping dies for edge-defined film-fed crystal growth C 30 B 15/34) [3] |
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15/ | 26 | . . . | using television detectors; using photo or X-ray detectors [3] |
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15/ | 28 | . . . | using weight changes of the crystal or the melt, e.g. flotation methods [3] |
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15/ | 30 | . | Mechanisms for rotating or moving either the melt or the crystal (flotation methods C 30 B 15/28) [3] |
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15/ | 32 | . | Seed holders, e.g. chucks [3] |
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15/ | 34 | . | Edge-defined film-fed crystal growth using dies or slits [3] |
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15/ | 36 | . | characterised by the seed, e.g. its crystallographic orientation [3] |
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17/ | 00 | Single-crystal growth on to a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C 30 B 15/00 takes precedence) |
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19/ | 00 | Liquid-phase epitaxial-layer growth [3] |
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19/ | 02 | . | using molten solvents, e.g. flux [3] |
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19/ | 04 | . . | the solvent being a component of the crystal composition [3] |
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19/ | 06 | . | Reaction chambers; Boats for supporting the melt; Substrate holders [3] |
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19/ | 08 | . | Heating of the reaction chamber or the substrate [3] |
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19/ | 10 | . | Controlling or regulating (controlling or regulating in general G 05) [3] |
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19/ | 12 | . | characterised by the substrate [3] |
| ^ | C30B 21/00 - C30B 35/00 >> |